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Conferences > QELS > 2007 > JWA > JWA139
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper JWA139

Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure

C. Y. Jin, H. Y. Liu, S. Y. Zhang, R. Airey, and M. Hopkinson

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Abstract

A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current density of 178A/cm2 is demonstrated with 1.34-μm GaInNAs/GaAs lasers.

© 2007 Optical Society of America

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