Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper JTuA95

Efficient Point Defect Engineered Si Light-emitting Diode at 1.218 µm

Not Accessible

Your library or personal account may give you access

Abstract

We have demonstrated a Si LED with an internal quantum efficiency ~ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.

© 2007 Optical Society of America

PDF Article
More Like This
Electrically pumped, waveguide-coupled Si light emitting diodes

S. M. Buckley, M. J. Stevens, S. W. Nam, R. P. Mirin, and J. M. Shainline
SM3O.6 CLEO: Science and Innovations (CLEO:S&I) 2017

Material and Interface Engineering for High Efficiency Light-emitting Devices

Alex K-Y. Jen
OMB3 Organic Materials and Devices for Displays and Energy Conversion (OMD) 2007

Enhancement of Light Extraction Efficiency of InGaN Quantum Wells LEDs Using SiO2 Microspheres

Yik-Khoon Ee, Pisist Kumnorkaew, Ronald A. Arif, James F. Gilchrist, and Nelson Tansu
CTuI3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved