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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper JTuA6

Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

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Abstract

We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.

© 2007 Optical Society of America

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