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Conferences > QELS > 2007 > JTuA > JTuA112
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper JTuA112

Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study

Zhiya Zhao, Kevin R. Lantz, Changhyun Yi, and Adrienne D. Stiff-Roberts

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Abstract

Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated.

© 2007 Optical Society of America

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