Abstract
The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface which using Ni nano-mask and laser etching methods were demonstrated and analyzed. The light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface with laser etching energy of 300 mJ/cm-2 is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
© 2006 Optical Society of America
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