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Conferences > QELS > 2006 > JWB > JWB23
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JWB23

Lasing characteristics of GaN vertical-cavity surface-emitting lasers with dielectric DBRs fabricated by laser-lift-off technique

Jung-Tang Chu, Hsin-Hung Yao, Wen-Deng Liang, Tien-Chang Lu, Hao-Chung Kuo, and S.C. Wang

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Abstract

The lasing characteristics of a GaN VCSEL with two dielectric DBRs of SiO2/TiO2 and SiO2/Ta2O5 were investigated. The laser emits wavelength at 414 nm under optical pumping at room temperature with a threshold energy of 270 nJ.

© 2006 Optical Society of America

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