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Conferences > QELS > 2002 > QThC > QThC5
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper QThC5

Terahertz Emission from InGaN LED Structures: Excitation Energy and Bias Dependence Study

J. Y. Sohn, J. S. Yahng, D. J. Park, E. Oh, D. S. Kim, G. D. Sunders, C. J. Stanton, and D. S. Citrin

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Abstract

GaN and InGaN have become important material owing to their application to the blue laser1 as well as high power electronics. Various optical and electric properties of InGaN/GaN have been studied but to the best of our knowledge, there have been no THz experiments performed in this system. In this paper, we report THz radiation from InGaN/GaN system.

© 2002 Optical Society of America

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