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Conferences > QELS > 2002 > QThB > QThB3
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper QThB3

Ultrafast Carrier Activation in Resonantly Excited 1.3-μm InAs/GaAs Quantum Dots at Room Temperature

F. Quochi, M. Dinu, J. Shah, L.N. Pfeiffer, K.W. West, and P.M. Platzman

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Abstract

Due to the three-dimensional confinement of electronic states in semiconductor quantum dots (QDs), LO phonon scattering is expected to be influenced strongly by the shape of the dots, the energy separation between the QD electronic states, and by the nature and symmetry of the phonon modes.

© 2002 Optical Society of America

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