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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper QTuE5

Carrier dynamics of single InAs quantum dots in a high density sample

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Abstract

There is inhomogeneous broadening due to fluctuations in size, strain, and composition in quantum dot (QD) ensembles. To overcome that single QDs spectroscopy has been done using low density samples in the range of 1µm−2,1 But the typical density of self-assembled InAs/GaAs QDs is high (>100 µm−2). It was shown that the carrier relaxation in QDs is strongly dependent on the carriers in the surrounding wetting layer.2 In high density QD ensembles the photoluminescence (PL) rise time is very small (<40 ps).3 But in low density single QDs there is delay as long as 2 ns, and it increases with excitation power.4 To solve this puzzle we did time-resolved PL experiments on single QDs in a high density sample.

© 2001 Optical Society of America

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