The T-shaped quantum wires (T-QWRs) have been successfully fabricated by the cleaved-edge overgrowth (CEO) method with molecular beam epitaxy1,2 and showed unique one-dimensional properties.3 However, the difficulty of this growth method still lies in growth of high-quality GaAs layer on the (110) cleaved surface, which requires low growth temperature around 480-500°C and high As flux. In fact, photoluminescence (PL) linewidths of the (110) quantum wells (QWs) and T-QWRS by CEO have been still broader than that of the conventional (001) QWs. In order to fabricate high-quality T-QWRs, further understanding and improvement of the growth of the GaAs layer on the (110) cleaved edge are, In particular, required.

© 2001 Optical Society of America

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