Polariton-biexciton transitions in a semiconductor microcavity

U. Neukirch; U. Neukirch; S. Bolton; S. Bolton; N.A. Fromer

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2000),
paper QTuI1

Polariton-biexciton transitions in a semiconductor microcavity

U. Neukirch, S. Bolton, and N.A. Fromer

Quantum Electronics and Laser Science Conference 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-608-7

From the session
HOCE 2: Carrier Correlation in Optical Excitations of Semiconductors 2 (QTuI)

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U. Neukirch, S. Bolton, and N. A. Fromer, "Polariton-biexciton transitions in a semiconductor microcavity," in Quantum Electronics and Laser Science Conference, T. Gallagher, H. Van Driel, H. Gibbs, and D. Wineland, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper QTuI1.

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Abstract

Recent pump-and-probe measurements performed on the exciton-polariton in GaAs-based microcavities have been interpreted in terms of contributions due to biexcitons.¹

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