Abstract
Near-field scanning optical microscopy (NSOM) is being studied intensively to achieve optical spatial resolution much better than the diffraction limit. This technique is ideally suited to probe semiconductor waveguides, modulators, and lasers fabricated from quantum well, wire, and dot nanostructures. In NSOM, nanometer-scale apertures and tips are used to localize probe fields. Improved resolution is realized when the sample is in the probe near-field. Strong near-field coupling between sample and probe complicates image analysis. One must separate effects due to structure in the tip fields, sample scattering, mutual interaction, and interference effects in the collection process. Modeling able to reproduce images and identify essential features in image formation is required. We describe several approaches that we have used, including the discrete dipole method and the multiple multipole method, to model scattering of nanometer-scale tip fields by nanometer-scale samples. NSOM images obtained from well-characterized experiments are simulated. Experimental and simulated images are compared to separate the contributions from tip-field structure, sample scattering, and mutual interaction and provide a clearer image interpretation.
© 1999 Optical Society of America
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