Abstract

Second harmonic generation (SHG) only occurs, in the dipole approximation, in material that is noninversion symmetric. Consequently, in material with bulk inversion symmetry, SHG only occurs near a surface or an interface that breaks the inversion symmetry.¹ Substantial interest has been paid to SHG from the Si(100)/SiO₂ interface because of its importance to the semiconductor industry. Results showing that SHG is sensitive to roughness at this interface² have only furthered interest. Roughness is becoming critical as MOSFET gate oxide fhickness shrinks to nanometer scale with shrinking gate dimension.

© 1999 Optical Society of America