Abstract

We describe time-resolved transient grating measurements of in-plane ambipolar transport in a narrowband-gap superlattice that has a period comprised of four layers; InAs/GaInSb/InAs/AlGaInAsSb. The structure was designed as an active region for mid-infrared semiconductor lasers. Variations of such superlattices have been used in a 2.7-μm diode laser and optically-pumped lasers operating at 3.7 and 5.2 μm.¹ Measurements of in-plane transport in these superlattices are of interest owing to novel features of the band structure² and to recent interest in the role of interface roughness on carrier transport in the InAs/GaInSb superlattice system.³ From a practical viewpoint, such measurements are useful for evaluating in-plane carrier leakage in lasers lacking lateral carrier confinement.

© 1999 Optical Society of America