Abstract

Recently second-harmonic generation (SHG) has been applied to study the direct optical interband transitions in the subsurface region of silicon. In most cases these studies have been performed for second-harmonic (SH) photon energies near the E'J£, critical points of silicon in the vicinity of 3.4 eV.¹ However, the SHG intensity spectrum is a coherent phase- dependent superposition of various resonant contributions to the SHG response. Thus the extraction from SHG intensity spectrum parameters of resonance, which are important for the further interpretation, such as central frequencies, linewidths and amplitudes, is hard to be unambiguously done. This is why simultaneous studies of SHG intensity spectra and SH wave phase spectroscopy are of key importance.

© 1999 Optical Society of America