Microscopic description of luminescence in semiconductor microcavities

M. Kira; F. Jahnke; W. W. Rühle; S. W. Koch; J. D. Berger; J. D. Berger; O. Lyngnes; O. Lyngnes; G. Khitrova; G. Khitrova; H. M. Gibbs; H. M. Gibbs; S. Hallstein; S. Hallstein

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1997),
paper QWD19

Microscopic description of luminescence in semiconductor microcavities

M. Kira, F. Jahnke, W. W. Rühle, S. W. Koch, J. D. Berger, O. Lyngnes, G. Khitrova, H. M. Gibbs, and S. Hallstein

Quantum Electronics and Laser Science Conference 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-501-3

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Poster Session: 2 (QWD)

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M. Kira, F. Jahnke, W. W. Rühle, S. W. Koch, J. D. Berger, O. Lyngnes, G. Khitrova, H. M. Gibbs, and S. Hallstein, "Microscopic description of luminescence in semiconductor microcavities," in Quantum Electronics and Laser Science Conference, J. Bokor, R. Slusher, P. Bucksbaum, and R. Falcone, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1997), paper QWD19.

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Abstract

Excitonic resonances in microcavities are an active field of research.^1–3 Because of the strong coupling of exciton and cavity resonances one observes the normal mode splitting.¹ In this presentation we study the luminescence properties of such a system, which is initially interband excited with a short laser pulse. The originally hot carriers relax as a result of carrier-carrier scattering and LO-phonon emission. We present a full quantum analysis of the luminescence properties by studying both the field dynamics and the many-body system of carriers microscopically.

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