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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper QWC5

Interface second-harmonic E1 and E1 + Δ1 interband resonances at the GaAs/oxide interface

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Abstract

Interface SH generation has been extensively used to probe strain1-4 and surface electrical fields2,3 at the Si/SiO2 interface. The properties of interfaces involving HI-V semiconductors such as GaAs are also crucial for both microwave electronics and high-performance semiconductor lasers. This paper presents measurements of the magnitude and phase of the interface SH response from (100) GaAs/oxide interfaces, for SH photon energies between 2.6 eV and 3.5 eV.

© 1997 Optical Society of America

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