Abstract
Interface SH generation has been extensively used to probe strain1-4 and surface electrical fields2,3 at the Si/SiO2 interface. The properties of interfaces involving HI-V semiconductors such as GaAs are also crucial for both microwave electronics and high-performance semiconductor lasers. This paper presents measurements of the magnitude and phase of the interface SH response from (100) GaAs/oxide interfaces, for SH photon energies between 2.6 eV and 3.5 eV.
© 1997 Optical Society of America
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