Abstract

The devices and applications for ultrafast optoelectronics of THz radiation or far-infrared light from various devices have been intensively studied.^1,2 For the design of various devices in the TH₂-radialion region, precise information of material properties will be required. Specially precise index, the optically and electrically induced index change of typical semiconductors are of interest. However, there have been tew reliable reports of such complex index measurement in the THz-radiation region. Development of complex index measurement system in the far infrared region will open up possibilities for the material research of new high-speed optoelectronic devices using THz radiation.

© 1997 Optical Society of America