Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper QThD4

The binding energy distribution of localized biexcitons

Not Accessible

Your library or personal account may give you access

Abstract

By lowering the dimensionality of semiconductor nanostructures, the biexciton binding energy is enhanced even stronger than the exciton binding energy. The localization of the exciton states as a result of imperfections of the interfaces further increases the biexciton binding energy.1

© 1997 Optical Society of America

PDF Article
More Like This
Quantization of the biexcitonic continuum states in semiconductor quantum wells by localization

W. Langbein, P. Borri, and J.M. Hvam
RTuB2 Radiative Processes and Dephasing in Semiconductors (RPDS) 1998

Inhomogeneity and Binding Energy of Biexcitons in Quantum Wells Using 2D Fourier-Transform Spectroscopy

Alan D. Bristow, Denis Karaiskaj, Xingcan Dai, Richard P. Mirin, and Steven T. Cundiff
IThF4 International Quantum Electronics Conference (IQEC) 2009

Binding of quasi two-dimensional biexcitons

D. Birkedal, J. Singh, V. G. Lyssenko, and J. M. Hvam
QThJ4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.