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Conferences > QELS > 1997 > QFF > QFF4
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper QFF4

Observation of second-order susceptibility In strain-compensated Type-II asymmetric quantum wells and selective disordering by patterned ion implantation

S. J. B. Yoo, R. Bhat, M. A. Koza, C. Caneau, and Murray K. Reed

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Abstract

Nonlinear optical devices based on second-order nonlinearites in semiconductors are potentially attractive for realizing highly efficient and versatile components by integrating semiconductor laser and optoelectronic elements. Quantum well nonlinearities1 can be significantly useful since the nonlinearity can be modulated by post growth methods such as field bias and ion implantations. Extremely large second-order nonlinearities resulting from intersubband transitions have been demonstrated in asymmetric quantum wells.1

© 1997 Optical Society of America

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