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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QTuB9

Ultrafast exciton trapping in Te-barrier- doped ZnSe:Te/(CdSe)m(ZnSe)n short period superlattice quantum wells

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Abstract

It has been reported that Te-barrier- doped ZnSe:Te/(CdSe)„(ZnSe)„ short period superlattice quantum wells (BDSPSQW) exhibit remarkable luminescence properties.1 The spatial separation of the free excitons and the self-trapped excitons in BDSPSQW are the key factor in determining their unusual luminescence properties. The role of isoelectronic Te in ZnSe has been described2; the dynamics of self-trapped excitons in Te trap centers in BDSPSQW, however, have not been explored. In this paper we report studies on the ultrafast dynamics of exciton trapping in BDSPSQW. The transient luminescence spectra of the samples at indirect excitation and 80 K show a rapid exciton trapping process and a slower self-trapped exciton lifetime that is various for different self-trapped states.

© 1996 Optical Society of America

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