Abstract
Coherent phonons are generated in the surface depletion layer of III-V semiconductors via the ultrafast screening of the surface field.1,2 In pump-probe experiments the modulation of the reflectivity resulting from coherent phonons can be detected by the intensity modulation of the weak probe pulses. For longitudinal oscillations like LO-phonon and plasmons the modification of the electronic susceptibility is dominated by the macroscopic electric field of these modes leading to an oscillation in the reflectivity.
© 1996 Optical Society of America
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