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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QThB4

Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

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Abstract

Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. In this paper we focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution.

© 1996 Optical Society of America

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