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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QThA4

Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors

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Abstract

Optical excitation of electron-hole plasma in semiconductor yields, in general, anisotropic momentum distributions of the excited charge carriers. It is well known that, even in bulk III-V semiconductors such as GaAs, optical excitation creates anisotropic plasmas resulting from the effects of spin orbit interaction. The initial anisotropy of the excited conduction band electrons is different for the contribution resulting from excitation from the heavy-hole valence band and that of the light-hole valence band. The momentum orientation relaxation, i.e., the scattering processes that make the distribution of carriers essentially isotropic, is believed to be the fastest scattering mechanism in semiconductors and essentially solely governed by carrier-carrier scattering.

© 1996 Optical Society of America

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