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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper JThC5

N-type modulation-doped strained InCaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

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Abstract

It is expected that an M-type modulation-doped quantum well (QW) lasers can achieve the reduction of threshold current. This is based on the physics that the absorption determined by fv(1 − fc), where fc and fv are the Fermi–Dirac distribution functions for conduction and valence band, respectively, can be reduced by making fc unity, which the aid of n-type modulation doping.1 Furthermore, it has been.examined that the carrier lifetime is also reduced.

© 1996 Optical Society of America

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