Abstract

The polarization of light from strained semiconductor lasers can switch between TE and TM polarization in dependence on the strain in the active layer and the injection current.^1,2 Experimental investigations of this effect give insight into the nonlinear interaction between differently polarized cavity modes. Understanding the physical mechanism of polarization switching is significant for its potential applications in memory and switching devices for optical communication systems.

© 1996 Optical Society of America