Strain-enhanced second-order susceptibility of asymmetric InGaAs/GaAs/AIGaAs quantum wells

V. W. Lee; T. K. Gustafson

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1995),
paper QWJ5

Strain-enhanced second-order susceptibility of asymmetric InGaAs/GaAs/AIGaAs quantum wells

V. W. Lee and T. K. Gustafson

Quantum Electronics and Laser Science Conference 1995

Baltimore, Maryland United States
22–26 May 1995
ISBN: 1-55752-402-5

From the session
Nonlinear Optical Processes in Quantum Wells (QWJ)

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V. W. Lee and T. K. Gustafson, "Strain-enhanced second-order susceptibility of asymmetric InGaAs/GaAs/AIGaAs quantum wells," in Quantum Electronics and Laser Science Conference, T. Heinz, G. Stegeman, J. Bokor, and R. Slusher, eds., Vol. 16 of OSA Technical Digest (Optica Publishing Group, 1995), paper QWJ5.

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Abstract

The interband difference-frequency susceptibility of strained asymmetric quantum wells (QW) is theoretically studied. For the particular case of an undoped InGaAs/GaAs/AlGaAs QW, an order of magnitude enhancement in the peak susceptibility is found when the effects of biaxial compressive strain are included in the calculations.

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