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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QTuC2

In-situ monitoring of Si(001) during epitaxial growth by optical second- harmonic generation of femtosecond pulses

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Abstract

New capabilities in interface nonlinear optics with femtosecond laser pulses have opened new possibilities for in situ, real- time nondestructive diagnostics of the growth of semiconductor films and heterostructures. Nonlinear optical probes such as SHG, because of interface specificity, are highly sensitive to growth kinetics and chemistry at the submonolayer level and to buried-interface properties. However, slow data acquisition and strong substrate heating have traditionally hampered its effectiveness as a real-time growth monitor. With SHG by state-of-the-art femtosecond excitation, real-time growth monitoring with negligible heating (<20 K) becomes possible.

© 1995 Optical Society of America

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