Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > QELS > 1995 > QThE > QThE3
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QThE3

Alteration of the spontaneous-emission rate in GaAs/AlGaAs/AlAs multilayer structures

M. Toed, M. J. Bloemer, M. Scaiora, J. P. Dowling, and C. M. Bowden

Not Accessible

Your library or personal account may give you access

Abstract

The emission rate of a semiconductor p-i- n light-emitting diode can be altered by surrounding the emitting region with a one dimensional virtual cavity.1 The cavity used in this experiment is actually a pair of high- reflectance Bragg mirrors, tuned so that the reflectivity band edge coincides with the wavelength of peak emission from GaAs.

© 1995 Optical Society of America

PDF Article
More Like This
Spontaneous Emission Coupling to the Lasing Mode in a Fabry-Perot Microcavity with High Contrast AlxOy/GaAs Bragg Reflectors

D.G. Deppe, D.L. Huffaker, H. Deng, J. Shin, and Q. Deng
QThE6 Quantum Optoelectronics (QOE) 1995

Design and growth of AlGaAs/AlAs structures for visible-wavelength modulation

R. J. Egan, A. Clark, and C. Jagadish
CThL3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Use of AlAs oxide/GaAs distributed Bragg reflectors to fabricate ultralow-threshold-current VCSELs

Michael H. MacDougal, P. Daniel Dapkus, Vasily Pudikov, Hanmin Zhao, and Gye Mo Yang
CTuB4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use