Abstract
In bulk crystals the correlation of the biexciton internal motion leads to rapid luminescence-decay times.1 Time-resolved photoluminescence (TRPL) on GaAs/AlGaAs quantum wells (QWs) reveals a decay transient associated with biexcitons.2 Is this transient due to the intrinsic radiative decay of a ground-state biexciton (GSB) or to competing processes, such as dissociation?
© 1995 Optical Society of America
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