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Conferences > QELS > 1993 > QWG > QWG1
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper QWG1

Ultrafast recombination of hot holes with shallow acceptors in p-type GaAs studied by time- resolved infrared spectroscopy

M. Woerner, A. Lohner, T. Elsaesser, and W. Kaiser

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Abstract

Shallow impurities strongly influence the electrical and optical properties of doped semiconductors. In particular, the trapping of free carriers and reionization of neutral impurities are important processes for charge transport in devices. In this paper we report the first, to our knowledge, direct time-resolved observation of the transfer of free holes from continuum states in the valence bands to the localized ground- state orbitals of the shallow acceptors in a p-type 1I1-V semiconductor.1

© 1993 Optical Society of America

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