Femtosecond-time-scale, transient-absorption studies of Ga atoms produced by 248.5-nm photolysis of gaseous GaCl—a saturable absorber for ultrafast KrF amplifiers

J. H. Glownia; D. R. Gnass; R. E. Walkup; P. P. Sorokin

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1993),
paper QTuI3

Femtosecond-time-scale, transient-absorption studies of Ga atoms produced by 248.5-nm photolysis of gaseous GaCl—a saturable absorber for ultrafast KrF amplifiers

J. H. Glownia, D. R. Gnass, R. E. Walkup, and P. P. Sorokin

Quantum Electronics and Laser Science Conference 1993

Baltimore, Maryland United States
2–7 May 1993
ISBN: 1-55752-302-9

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Ultrafast Phenomena in Chemical Systems (QTuI)

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J. H. Glownia, D. R. Gnass, R. E. Walkup, and P. P. Sorokin, "Femtosecond-time-scale, transient-absorption studies of Ga atoms produced by 248.5-nm photolysis of gaseous GaCl—a saturable absorber for ultrafast KrF amplifiers," in Quantum Electronics and Laser Science Conference, D. Auston, D. Steel, T. Heinz, and G. Stegeman, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1993), paper QTuI3.

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Abstract

The C¹PI-state is the first singlet excited state for the group (IIIa) monohalides. It correlates with the products metal (²P)+halogen (²P) whose total energy is slightly below that of the C-state. This results in the presence of an energy barrier on the outer portion of the C-state potential well. For GaCl the height of this barrier approximately coincides with the υ′= 1 vibrational level of the C-state. Thus the (1, 0) component of the C←X band (peak at 248.4 nm, molar absorptivity ε≃50, 000 I mol⁻¹cm⁻¹) is truly diffuse.

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