Abstract
We use time-resolved differential transmission spectroscopy to measure the temporal evolution of internal fields by means of the Franz-Keldysh effect (FKE) and quantum-confined Stark effect (QCSE) in biased GaAs hetero structures. The samples are diode structures containing the electro-optical active layer in the center of an intrinsic AlGaAs region. The active layer consists of 220-nm i-GaAs in the bulk sample and 40 periods of 9-nm GaAs wells and 9nm Al0.5Ga0.7As barriers in the quantumwell sample. We measure the time dependeuce of field-induced transmission changes after excitation with femtosecond laser pulses.
© 1993 Optical Society of America
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