Abstract
Excitonic effects in semiconductors are dominant in near-gap optical processes and are usually treated in the 3D or 3D limits. Phase-space filling, screening, and carriercarrier scattering are known to be very different in 2D and 3D, yet little attention has been paid to the influence of excitonic structure perpendicular to the plane of ultrathin layers. We present, to our knowledge, the first systematic investigation of the nonlinear optical response of quantum wells (QW’s), in a series of high-quality samples of varying thicknesses that enables us to explore the 3Dto-2D transition.
© 1993 Optical Society of America
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