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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper QThH28

Induced interband transparencies in semiconductor quantum wells

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Abstract

Recently, approaches to either zero absorption accompanied by high index change1 or induced transparency2 have been predicted and observed in atomic systems. We have investigated analogous configurations in semiconductor quantum wells and have shown the possibility of inducing interband transparencies.3 Since previous perturbative density-matrix approaches in semiconductors have strict weak-field limits,4 analysis of a three-level quantum-well system is difficult. Here, for the first time to our knowledge, we show a general density- matrix formalism capable of treating both configurations without weak-field requirements. We formulate the coupled equations from the one-electron density-matrix equation

© 1993 Optical Society of America

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