Abstract
Narrow-gap type-II superlattices, such as InAs-GaSb and InAs-Ga1−xInxSb, are presently under rapid development as attractive infrared-detector1,2 and nonlinear-optical3 materials for the long-wave infrared (LWIR). In both of these applications the recombination lifetime is central in the ultimate performance of devices. The only previously reported attempt to probe lifetimes consisted of time-resolved photoconductivity measurements on an InAs-Ga0.65In0.35Sb superlattice.4 Although two decay constants were observed, 2 ns and 2 μs, one could not role out the possibility that both were the result of trapping effects.
© 1993 Optical Society of America
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