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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper QFC3

Fabrication and optical properties of GaAs quantum wires and dots: toward fully quantized microlasers

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Abstract

Reduction of the dimensionality of electron motion by using quantum wells, quantum wires, and quantum dots brings new phenomena to semiconductor physics and introduces new device concepts.1,2 Moreover, recent intensive investigations of the concept of controlling photon-electron interaction by using microcavities in semiconductor lasers have led to, for example, zero-threshold semiconductor lasers. As a consequence of these investigations, we find that the full quantization of electrons and photons by using three-dimensional microcavity and quantum dots is one of the ultimate structures in future semiconductor lasers.

© 1993 Optical Society of America

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