Abstract
To understand how semiconductor lasers and amplifiers operate it is necessary to understand the intrinsic optical and electronic properties of highly inverted media, including many body interactions and carrier relaxation. Ultrafast techniques have been applied extensively to intrinsic and doped (single component plasma) bulk and quantum well (QW) samples.1 For electrically pumped inverted semiconductors (two component plasmas) which are relevant for lasers, all previous experimental work has been performed on waveguide devices, such as edge emitting amplifiers.2 These measurements are corrupted by geometrical artifacts such as waveguide dispersion and mode dynamics3 and there tore do not fully reflect the intrinsic properties of inverted semiconductors. Here we study experimentally the loss of phase coherence and the differences between gain and spontaneous emission in specially designed structures which avoid the artifacts associated with the waveguide geometry.
© 1993 Optical Society of America
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