Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper QThD4

High-resolution nonlinear magneto-optical spectroscopy in GaAs grown by molecular beam epitaxy

Not Accessible

Your library or personal account may give you access

Abstract

The presence of strong magnetic fields significantly modifies electronic states of a semiconductor, such as quantization of energy levels (Landau levels) and shrinkage of exciton wave functions.1 Consequently, significant changes in optical as well as transport properties of the material are expected. In this paper, we report observations of an enhanced nonlinear optical response and a dramatic reduction of mobilities for magnetoexcitons in GaAs. We also discuss nonlinear optical measurements of excitons associated with higher Landau levels.

© 1992 Optical Society of America

PDF Article
More Like This
High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy

J. H. Quigley, H. Y. Lee, M. D. Crook, M. J. Hafich, G. Y. Robinson, Du Li, and N. Otsuka
TuE9 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

High-speed GaAs heterojunction phototransistor grown by molecular beam epitaxy

D. Ankri, W. J. Schaff, J. A. Barnard, S. Ralph, and L. F. Eastman
MJ3 Optical Fiber Communication Conference (OFC) 1983

High-speed GaAs PIN photodiodes grown on Si substrates by molecular beam epitaxy

J. PASLASKI, H. Z. CHEN, H. MORKOC, and AMNON YARIV
THX2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.