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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper QMF5

Subpicosecond hot-hole dynamics in highly excited GaAs

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Abstract

We have measured the temporal evolution oil the absorption coefficient around the band edge on a thin GaAs film at room temperature by femtosecond pump-probe techniques. For earner densities larger 3×1015 cm−3 injected at 2 eV, optical gain is observed in a wide spectral region (from 850 to 900 ran) on a subpicosecond time scale (Fig. 1). We have compared the measured time delays for gain to occur with a kinetic model1 and concluded that the origin of the subpicosecond gain is (i) the nearly instantaneous equilibration of the carrier distributions near the Γ point of the Brillouin stone,2 and (ii) the very efficient cooling mechanism for Γ-valley electrons by preferential scattering of high-energy electrons to the X and L valleys.

© 1992 Optical Society of America

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