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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper QMF4

Ultrafast relaxation of photo-excited holes in n-doped III–V compounds studied by femtosecond luminescence

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Abstract

In recent years, extensive time-resolved experiments on hot electron relaxation have been performed on a subpicosecond time scale. Energy relaxation of hot holes, however, is less understood for two reasons: First, one expects a larger energy relaxation rate for holes than for electrons, so that an investigation of hole relaxation in the time domain needs higher time resolution. Second, suitable measurement techniques for a direct investigation of hole relaxation are lacking. In previous studies of ultrafast electron relaxation, hole relaxation has been assumed to be completed within 300 fs.1 Theoretical calculations of hole relaxation have used very different values of deformation potential coupling constant of TO phonons between 10 eV2 and 41 eV3 for GaAs.

© 1992 Optical Society of America

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