Abstract
Strained quantum wells composed of InxGa1−xAs are currently of considerable interest for application in optoelectronic and optical devices. The strain-induced splitting of the light and heavy-hole valence bands and reduction in the effective mass of the upper valence band result in a number of desirable features, such as reduction in laser thresholds and enhanced hole mobilities. It is possible that the replacement of the disordered ternary alloy InxGa1−xAs with a strained superlattice composed of the ordered binary materials InAs and GaAs may result in a further enhancement of material parameters. The large strain in these structures may provide further reduction of the hole mass and corresponding increase in the mobility relative to InxGa1−xAs. In addition, it has been found that by replacing the InxGa1−xAs with a strained all-binary superlattice, it is possible to increase the average mole fraction of indium in a quantum well without causing relaxation.1 This may result in a further increase in carrier mobilities.
© 1991 Optical Society of America
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