Abstract

Nondestructive testing of semiconductor wafers is of essential importance for the production of high-quality devices and integrated circuits. Time-resolved photoinduced reflectance techniques as well as second-harmonic generation (SHG) with femtosecond pulses provide a high sensitivity to process induced defects of the wafer surface, such as implantation damage. Transient reflectivity experiments on silicon wafers as well as SHG measurements on GaAs wafers are performed with 50-fs pulses from a colliding-pulse mode-locked ring laser operating at 100 MHz.

© 1991 Optical Society of America