Abstract

Epitaxially grown II—VI quantum-well structures have shown strong intrinsic exciton features in both absorption and luminescence.¹ At low temperature under narrow-band laser excitation, a series of sharp lines have been observed in emission superimposed on the inhomogeneously broadened exciton line.² The lines are separated from the laser photon energy by an integral number of LO phonon energies. These lines have been shown to predominantly result from luminescence and not from resonant Raman scattering. The lines represent a narrow band of excitons within the inhomogeneous band, which have been created nonresonantly by the laser and which allow us to probe the exciton dynamics as a function of wavelength, intensity, and temperature.

© 1991 Optical Society of America