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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper QMF4

Cross-well photoconductive rise time as a function of carrier density in a GaAs/AlGaAs multiple quantum-well p-i-n structure

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Abstract

An understanding of the mechanisms responsible for the photoconductive rise time in multiple quantum-well (MQW) structures is important for the high-frequency operation of photodetectors and SEED-type logic devices and for the reduction of the recovery times of nonlinear optical devices by carrier sweepout The ultrafast response depends on the detailed nature of the cross-well carrier-transpot mechanisms. Previous measurements have used the excite-probe technique with electrically biased MQWs to monitor thermionic emission and tunneling by transmission changes caused by the relaxation of the quantum-eon fined Stark effect as carriers leave the wells.1-3 In the present work, we have extended these measurements to longer time delays and have investigated the effects of higher carrier densities appropriate to nonlinear optical-switching devices.

© 1991 Optical Society of America

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