Abstract
An understanding of the mechanisms responsible for the photoconductive rise time in multiple quantum-well (MQW) structures is important for the high-frequency operation of photodetectors and SEED-type logic devices and for the reduction of the recovery times of nonlinear optical devices by carrier sweepout The ultrafast response depends on the detailed nature of the cross-well carrier-transpot mechanisms. Previous measurements have used the excite-probe technique with electrically biased MQWs to monitor thermionic emission and tunneling by transmission changes caused by the relaxation of the quantum-eon fined Stark effect as carriers leave the wells.1-3 In the present work, we have extended these measurements to longer time delays and have investigated the effects of higher carrier densities appropriate to nonlinear optical-switching devices.
© 1991 Optical Society of America
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