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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper WEE2

Direct evidence for excitation-energy-dependent interlayer scattering rates in type II GaAs/AlAs superlattices

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Abstract

Type II GaAs/AlAs superlattices in which the quantum confinement of electrons produce the staggered alignment of the valence and conduction bands have recently received much attention1-4, yet a scarcity of information remains regarding the intersubband and interlayer relaxation dynamics in these structures.

© 1989 Optical Society of America

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