Abstract
Using the mixed conductivity photorefractive theory,1,2 measurement of beam coupling as a function of grating spacing and incident intensity combined with standard Hall measurements in an InP:Fe sample has resulted in the determination of empty and filled trap density and electron and hole photoionization and recombination cross sec tions.3 By measuring the photorefractive grating decay rates, Bylsma et al.4 mapped out the EL2+ density across a GaAs wafer.
© 1989 Optical Society of America
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