Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper WBB5

Photorefractive measurement of material parameter variation in an undoped GaAs boule

Not Accessible

Your library or personal account may give you access

Abstract

Using the mixed conductivity photorefractive theory,1,2 measurement of beam coupling as a function of grating spacing and incident intensity combined with standard Hall measurements in an InP:Fe sample has resulted in the determination of empty and filled trap density and electron and hole photoionization and recombination cross sec tions.3 By measuring the photorefractive grating decay rates, Bylsma et al.4 mapped out the EL2+ density across a GaAs wafer.

© 1989 Optical Society of America

PDF Article
More Like This
Dynamic behavior of the picosecond photorefractive process in undoped GaAs

HONGWEI MAO, YIXIAN LIU, and FUMING LI
WF63 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Observation of the photorefractive effect in semiconductors on a 5-ps time scale

Arthur L. Smirl, W. Andreas Schroeder, Martin D. Dawson, David P. Norwood, and George C. Valley
MCC2 OSA Annual Meeting (FIO) 1989

Beam Coupling in Undoped GaAs at 1.06 µm Using the Photorefractive Effect

M. B. Klein
MFF4 International Quantum Electronics Conference (IQEC) 1984

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved