Abstract
Photorefractive effects have now been observed in at least four semiconductors with picosecond to cw lasers. In contrast to most of the oxide materials, the defect center responsible for the photorefractive effect in semiconductors is known, and many of the properties on which the photorefractive effect depends, mobilities, cross sections, and number densities, are also known. This advantage can be exploited to obtain new properties of semiconductors and to test the limits of applicability of photorefractive theory.
© 1989 Optical Society of America
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