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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper WAA3

Picosecond absorption imaging of photoexcited carriers in GaAs quantum wells

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Abstract

We have studied the laterial motion of photoexcited carriers in GaAs/Al0.3Ga0.7As quantum wells with 2-μm and 10-ps resolution at ambient temperatures ranging from 2 to 40 K. Our experiments monitor the transmission of a weak probe beam tuned to the exciton absorption resonance. As has been previously demonstrated, the strength of the absorption line is reduced in the presence of nonequilibrium carriers due to Coulomb screening and state filling.1-4

© 1989 Optical Society of America

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