Electronic Raman scattering (ERS) is used to determine the velocity distribution of conduction electrons in active GaAs devices. Two types of device were studied. LPE grown GaAs which consisted of a GaAs drift region (≈9 μm) between two more heavily doped GaAs contact regions and MBE grown GaAs/AlGaAs heterojunction devices with 1500- and 3000-Å GaAs drift regions.1

© 1989 Optical Society of America

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