Abstract

Electronic Raman scattering (ERS) is used to determine the velocity distribution of conduction electrons in active GaAs devices. Two types of device were studied. LPE grown GaAs which consisted of a GaAs drift region (≈9 μm) between two more heavily doped GaAs contact regions and MBE grown GaAs/AlGaAs heterojunction devices with 1500- and 3000-Å GaAs drift regions.1

© 1989 Optical Society of America

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