Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THBB2

Nonequilibrium carrier distribution in GaAs probed by electronic Raman scattering

Not Accessible

Your library or personal account may give you access

Abstract

Electronic Raman scattering (ERS) is used to determine the velocity distribution of conduction electrons in active GaAs devices. Two types of device were studied. LPE grown GaAs which consisted of a GaAs drift region (≈9 μm) between two more heavily doped GaAs contact regions and MBE grown GaAs/AlGaAs heterojunction devices with 1500- and 3000-Å GaAs drift regions.1

© 1989 Optical Society of America

PDF Article
More Like This
Role of Electron–Electron Scattering on the Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

M. J. Kann and D. K. Ferry
TT153 Picosecond Electronics and Optoelectronics (UEO) 1989

Raman scattering study of AuGe ohmic contact to GaAs

J. C. Yee and P. M. Fauchet
THKK4 OSA Annual Meeting (FIO) 1989

Refractive Index Modulation in Selectively Contacted GaAs N-I-P-I Structures

T. Y. Hsu, W. Y. Wu, U. Efron, J. N. Schulman, and G. Hasnain
TuE14 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved